PM82802C-28QW is a high-speed 3-phase gate driver for power MOSFET and IGBT devices with three independent high and low side referenced output channels. Built-in dead time protection and shootthrough protection prevent damage to the half-bridge. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. A novel high-voltage BCD process and common-mode noise canceling technique provide stable operation of high-side drivers under high dV/dt noise conditions while achieving excellent negative transient voltage tolerance. Low-PW consumption is included so that standby mode may be used to set the chip into a low quiescent current state to realize long battery lifetime.
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