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PJ60021

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產品描述

High Voltage Gate Driver

產品特點

5V ±5% Power supply
Drain Voltage Range 1.0V to 20V
Internal Gate Voltage Charge Pump
Controlled Turn on Delay
Controlled Load Discharge Rate
Controlled Turn on Slew Rate
Stable Slew Rate(±2% Typ.) over Temperature
Pb-Free/Halogen-Free/RoHS compliant
DFN2X2-8

產品介紹

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產品介紹

The PJ60021 N-Channel FET Gate Driver is used for controlling a delayed turn on and ramping slew rate (2V/ms, typ) of the source voltage on N-Channel FET switches from a CMOS logic level input. The PJ60021 integrates a charge pump internally, significantly reducing static power consumption. The quiescent current <5μA (typ) in standby state. Intended as a supporting control element for switched voltage rails in energy efficient, advanced power management systems, the PJ60021 also integrates circuits to discharge opened switched voltage rails. Furthermore, the PJ60021 is equipped with a built-in Power Good module to monitor whether the external N-FET is working properly.

產品規格

Recommended Operating Conditions

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Parameter
Specification
Operating Temperature(TA)
-40°C~125°C
Continuous Supply Voltage (VCC)
4.75V~5.25V
Junction Temperature (TJ)
-40°C~125°C

Key Electrical Characteristics

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Parameter
Condition
Specification
Quiescent Current
VG not ramping FET = ON
5uA (Typ.)
FET Drain Voltage
1V~20V
Gate - Source Voltage
10V (Typ.)
FET Gate Capacitance
500pF~8000pF
Internal Discharge Resistor
Nominal discharge time of ~100ms 10mA max rate
150Ω (Typ.)
HIGH – Level input voltage
ON, SHDN# (200mV Hysteresis)
2.4V~5.5V
LOW – Level input voltage
ON, SHDN# (200mV Hysteresis)
~0.4V
Gate Drive Sink Current
700uA (Typ.)
Gate Drive Source Current
60uA (Typ.)

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PJ60021_Datasheet

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