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PM56005A-60P

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產品描述

600V, 5A, 3Phase Inteligent Power Module

產品特點

Built-in six 6A/600V fast recovery power MOSFET
Built-in high-voltage gate driver circuit (HVIC)
Built-in undervoltage protection
Built-in bootstrap diode
Fully compatible with 3.3V and 5V MCU interfaces, active-high logic
Temperature sensing function
Three independent negative DC terminals for inverter current sensing applications
Low-EMI optimized design
Insulation rating:1500Vrms/min

產品介紹

產品規格

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產品介紹

PM56005A-60P is a compact, integrated solution for motor control, combining six MOSFETs in a 3-phase bridge with built-in HVIC (High-Voltage IC) drivers and protection features like UVLO, short-circuit, and over-temperature.

產品規格

Inverter Section – Specifically for a Single Fast Recovery MOSFET

拖曳表格以查看完整資訊。

Parameter
Condition
Specification
Drain-to-Source Breakdown Voltage
VIN = 0V, ID = 250μA
>600V
Static Drain-to-Source On-Resistance
VCC = VBS = 15V, VIN = 5V, ID = 1.2A
<2.0Ω
Forward Voltage of Drain-to-Source Diode
VCC = VBS = 15V, VIN = 0V, ID = -1.2A
<1.2V

Control Part Single HVIC

拖曳表格以查看完整資訊。

Parameter
Condition
Specification
High-Level Conduction Threshold Voltage
(Logic high level, between input and COM)
>3V
Low-Level Turn-Off Threshold Voltage
(Logic low level, between input and COM)
>0.8V

Bootstrap Diode Section

拖曳表格以查看完整資訊。

Parameter
Condition
Specification
Forward Voltage
IF = 0.5A, TC = 25°C
<1.5V
Reverse Recovery Time
IF = 0.5A, TC = 25°C
<50ns

NTC (Negative Temperature Coefficient) Resistor

拖曳表格以查看完整資訊。

Parameter
Condition
Specification
Thermistor Resistance
TTH = 25°C
48KΩ(Typ.)
Thermistor Resistance
TTH = 100°C
31KΩ(Typ.)

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PM56005A-60P_Datasheet

PDF

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